发明名称 |
GAN TYPE LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
The present invention relates to a GaN type LED device and a method of manufacturing the same. More particularly, there are provided a GaN type LED device including an LED chip; and a submount eutectic-bonded with the LED chip through an adhesive layer, wherein the adhesive layer is configured by soldering a plurality of metallic layers in which a first metallic layer and a second metallic layer are sequentially stacked, and the second metallic layer is formed in a paste form. Further, the present invention provides a method of manufacturing the GaN type LED device. |
申请公布号 |
US2014213003(A1) |
申请公布日期 |
2014.07.31 |
申请号 |
US201414228967 |
申请日期 |
2014.03.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KO Kun Yoo;JEONG Young June;CHOI Seung Hwan;JOO Seong Ah;PARK Jung Kyu |
分类号 |
H01L33/00;H01L33/48;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |