TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES

摘要

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

主权项

1. A light emitting device configured as a laser device, comprising:
a semipolar III-nitride film including a light emitting device structure, wherein:
the light emitting device structure includes one or more semipolar III-nitride active layers grown on or above a surface of a substrate, andone or more material properties of the semipolar III-nitride active layers are such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current; andan edge configured on the light emitting device structure for emission of electromagnetic radiation.