发明名称 LITHOGRAPHY APPARATUS, LITHOGRAPHY METHOD, AND METHOD OF MANUFACTURING ARTICLE
摘要 A lithography apparatus measures a position of each sample shot, and obtains a measurement error with respect to each second shot region of the sample shot regions based on a position of each second shot region obtained by first regression calculation based on a measurement value of a position of each first shot region of the sample shot regions, and a measurement value of a position of each second shot region. After forming the pattern in at least one shot region, the apparatus measures a position of each of shot regions of the second shot regions in a partial area, and obtains positions of shot regions in the partial area by second regression calculation based on measurement values of the positions of shot regions in the partial area and the obtained measurement error.
申请公布号 US2014209818(A1) 申请公布日期 2014.07.31
申请号 US201414167463 申请日期 2014.01.29
申请人 CANON KABUSHIKI KAISHA 发明人 Oishi Satoru
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A lithography apparatus for forming a pattern sequentially in each of a plurality of shot regions on a substrate, the apparatus comprising: a measurement device configured to measure a position of a shot region on the substrate; and a controller configured to control the measurement device and obtain a position of each of the plurality of shot regions based on measurement by the measurement device, wherein the controller is configured: to cause the measurement device to measure a position of each of a plurality of sample shot regions on the substrate, and to obtain, based on a position of each of a plurality of second shot regions, of the plurality of sample shot regions, obtained by first regression calculation based on a measurement value of a position of each of a plurality of first shot regions of the plurality of sample shot regions, and a measurement value of a position of each of the plurality of second shot regions, a measurement error with respect to each of the plurality of second shot regions and to cause, after forming the pattern in at least one of the plurality of shot regions, the measurement device to measure a position of each of shot regions, of the plurality of second shot regions, in a partial area on the substrate where the pattern is to be formed, and to obtain positions of shot regions in the partial area by second regression calculation based on measurement values of the positions of the shot regions in the partial area and the obtained measurement errors.
地址 Tokyo JP