| 摘要 |
<p>Disclosed is a single-crystal ingot growth apparatus including a chamber, a crucible placed within the chamber and configured to accommodate a melt that is a raw material for single-crystal growth, a top insulator located at an upper end of the crucible, the top insulator having a central first opening and a second opening provided between an inner circumferential surface and an outer circumferential surface of the top insulator, a camera configured to capture an image of the melt and a single-crystal ingot that is being grown, through the first opening and the second opening and to output image data, and a detector configured to calculate a diameter of the single-crystal ingot that is being grown, based on the image data.</p> |
