| 发明名称 |
ATHERMAL WAVEGUIDE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
Provided are an athermal waveguide and a method of manufacturing the same. The athermal waveguide includes: a substrate having a protruded region; a first material layer formed on the protruded region to counteract thermal expansion; and a second material layer formed on the first material layer a position corresponding to the protruded region and formed of a same base material as the protruded region. |
| 申请公布号 |
US2014212104(A1) |
申请公布日期 |
2014.07.31 |
| 申请号 |
US201313950659 |
申请日期 |
2013.07.25 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
CHO Seong-ho;MOHAMMAD Rakib Uddin |
| 分类号 |
G02B6/136 |
主分类号 |
G02B6/136 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An athermal waveguide comprising:
a substrate having a protruded region; a first material layer formed on the protruded region, the first material layer configured to counteract thermal expansion; and a second material layer formed on the first material layer at a position corresponding to the protruded region and formed of a same base material as the protruded region. |
| 地址 |
Suwon-Si KR |
