发明名称 |
SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS |
摘要 |
A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction. |
申请公布号 |
US2014211053(A1) |
申请公布日期 |
2014.07.31 |
申请号 |
US201414242407 |
申请日期 |
2014.04.01 |
申请人 |
SONY CORPORATION |
发明人 |
Kido Hideo;Yamamoto Atsuhiko;Yamada Akihiro |
分类号 |
H01L27/146;H04N5/3745 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
|
主权项 |
1. A solid-state imaging device comprising:
a first pixel including:
a first plurality of photoelectric conversion portions;a first transistor portion shared by the first plurality of photoelectric conversion portions, the first transistor portion including a first reset transistor and a first amplification transistor; and a second pixel including:
a second plurality of photoelectric conversion portions;a second transistor portion shared by the second plurality of photoelectric conversion portions, the second transistor portion including a second reset transistor and a second amplification transistor, wherein the first amplification transistor and the second amplification transistor are disposed a first row and the first reset transistor and the second reset transistor are disposed in a second row. |
地址 |
Tokyo JP |