THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF

摘要

A thin film transistor (TFT) array panel and a manufacturing method thereof are disclosed. A contact hole may be formed to expose a pad disposed on a substrate of the TFT array panel. A first layer of a connecting member is formed with the same layer as a first field generating electrode and is disposed in the contact hole. A second passivation layer is disposed in the TFT array panel, but is removed at a region where the contact hole is formed and portions of the second passivation layer that cover the first layer of the connecting member. A second layer of the connecting member is formed on the first layer of the connecting member.

主权项

1. A thin film transistor array panel, comprising:
a substrate; a gate line and a gate pad disposed on the substrate; a gate insulating layer disposed on the gate line and the gate pad; a data line and a data pad disposed on the gate insulating layer; a first passivation layer disposed on the data line and the data pad; an organic layer disposed on the first passivation layer; a first field generating electrode disposed on the organic layer; and a second passivation layer disposed on the first field generating electrode, wherein the organic layer is disposed in a first region comprising the gate pad and the organic layer is disposed in a second region comprising the data pad, and wherein the second passivation layer is not disposed in the first region and the second region.