| 摘要 |
Techniques, materials, and circuitry are disclosed which enable low-voltage, embedded memory applications. In one example embodiment, an embedded memory is configured with a bitcell having a memory element and a selector element serially connected between an intersection of a wordline and bitline. The selector element can be implemented, for instance, with any number of crystalline materials that exhibit an S-shaped current-voltage (IV) curve, or that otherwise enables a snapback in the selector voltage after the threshold criteria is exceeded. The snapback of the selector is effectively exploited to accommodate the ON-state voltage of the selector under a given maximum supply voltage, wherein without the snapback, the ON-state voltage would exceed that maximum supply voltage. In some example embodiments, the maximum supply voltage is less than 1 volt (e.g., 0.9 volts or less). |
