DETECTOR FOR INFRARED AND/OR THz RADIATION

摘要

The present invention relates to a detector for infrared and/or THz radiation, comprising an antenna for the infrared and/or THz radiation and a rectifying MIM tunnel diode with a first metal layer (1), a second metal layer (2) and a dielectric layer (3) lying therebetween for rectification of the signal received via the antenna. The first metal layer (1) is designed as a resonator for the infrared or THz radiation. The antenna for the infrared or THz radiation is formed by the resonator of the first metal layer (1). This detector thus avoids the problem of the upper limit frequency in the THz range and can be produced in a CMOS process.