| 摘要 |
A system and methods for programming a set of data onto non-volatile memory elements, maintaining copies of the data pages to be programmed, as well as surrounding data pages, internally or externally to the memory circuit, verifying programming correctness after programming, and upon discovering programming error, recovering the safe copies of the corrupted data to be reprogrammed in alternative non-volatile memory elements. Additionally, a system and methods for programming one or more sets of data across multiple die of a non-volatile memory system, combining data pages across the multiple die by means such as the XOR operation prior to programming the one or more sets of data, employing various methods to determine the correctness of programming, and upon identifying data corruption, recovering safe copies of data pages by means such as XOR operation to reprogram the pages in an alternate location on the non-volatile memory system. |
| 主权项 |
1. A process for programming non-volatile storage, comprising:
programming a first set of data into a first set of non-volatile storage elements; prior to the programming of the first set of data, storing an additional copy of nearby data in one or more auxiliary locations that are different from intended non-volatile storage elements in the non-volatile storage for the nearby data, the nearby data is stored on proximate word lines with respect to the first set of non-volatile storage elements; determining whether the first set of data was programmed correctly; if the first set of data was programmed correctly, releasing at least a portion of the additional copy of nearby data; and if the first set of data was not programmed correctly, re-programming the first set of data to non-volatile storage elements different than the first set of non-volatile storage elements and recovering at least a portion of the nearby data from the additional copy and programming the recovered nearby data to additional non-volatile storage elements that are different than the intended non-volatile storage elements. |
