LOW SHRINKAGE DIELECTRIC FILMS

摘要

Methods of forming a dielectric layer on a substrate are described, and may include introducing a first precursor into a remote plasma region fluidly coupled with a substrate processing region of a substrate processing chamber A plasma may be formed in the remote plasma region to produce plasma effluents. The plasma effluents may be directed into the substrate processing region. A silicon-containing precursor may be introduced into the substrate processing region, and the silicon-containing precursor may include at least one silicon-silicon bond. The plasma effluents and silicon-containing precursor may be reacted in the processing region to form a silicon-based dielectric layer that is initially flowable when formed on the substrate.

主权项

1. A method of forming a dielectric layer on a substrate in a substrate processing region of a processing chamber, the method comprising:
introducing a first precursor into a remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the remote plasma region to produce plasma effluents; directing the plasma effluents into the substrate processing region; introducing a silicon-containing precursor into the substrate processing region, wherein the silicon-containing precursor includes at least one silicon-silicon bond; and reacting the plasma effluents and silicon-containing precursor in the substrate processing region to form a silicon-based dielectric layer that is initially flowable when formed on the substrate.