发明名称 System for Self-Aligned Contacts
摘要 A system for forming self-aligned contacts includes electroplating a first metal contact onto a Group III-V semiconductor substrate, the first metal contact having a greater height than width and having a straight sidewall profile, etching back the semiconductor substrate down to a base layer to expose an emitter semiconductor layer under the first metal contact, conformally depositing a dielectric layer on a vertical side of the first metal contact, a vertical side of the emitter semiconductor layer and on the base layer, anisotropically etching the dielectric layer off of the semiconductor substrate to form a dielectric sidewall spacer on the vertical side of the first metal contact and providing a second metal contact immediately adjacent the dielectric sidewall spacer.
申请公布号 US2014213052(A1) 申请公布日期 2014.07.31
申请号 US201414188612 申请日期 2014.02.24
申请人 Teledyne Scientific & Imaging, LLC 发明人 Urteaga Miguel;Pierson, JR. Richard L.;Shinohara Keisuke
分类号 H01L21/288;H01L29/72;H01L29/20 主分类号 H01L21/288
代理机构 代理人
主权项 1. A method of forming self-aligned contacts, comprising: electroplating a first metal contact onto a Group III-V semiconductor substrate, said first metal contact having a greater height than width and having a straight sidewall profile; etching back said semiconductor substrate down to a base layer to expose an emitter semiconductor layer under said first metal contact; conformally depositing a dielectric layer on a vertical side of said first metal contact, a vertical side of said emitter semiconductor layer and on said base layer; anisotropically etching said dielectric layer off of said semiconductor substrate to form a dielectric sidewall spacer on said vertical side of said first metal contact; depositing a second metal contact immediately adjacent said dielectric sidewall spacer; depositing a dielectric blanket layer on said dielectric sidewall spacer prior to said depositing a second metal contact; depositing a planarizing layer on said dielectric blanket layer; and selectively etching said dielectric blanket layer to form a second contact opening to receive said second metal contact; wherein the thickness of said dielectric blanket layer determines the width of the second metal contact, with the second contact having inner and outer edges that are self aligned with the first contact.
地址 Thousand Oaks CA US