发明名称 In-Situ Charging Neutralization
摘要 Some embodiments relate to a method for semiconductor processing. In this method, a semiconductor wafer is provided. A surface region of the semiconductor wafer is probed to determine whether excess charge is present on the surface region. Based on whether excess charge is present, selectively inducing a corona discharge to reduce the excess charge. Other techniques are also provided.
申请公布号 US2014210506(A1) 申请公布日期 2014.07.31
申请号 US201313753627 申请日期 2013.01.30
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 Wu Lin-Jung;Hsu Jyh-Shiou;Yang Chi-Ming
分类号 G01R31/26 主分类号 G01R31/26
代理机构 代理人
主权项 1. A method, comprising: providing a semiconductor wafer; probing a surface region of the semiconductor wafer to determine whether a charge condition is present on the surface region; and based on whether the charge condition is present, selectively inducing a corona discharge to alter the charge condition.
地址 Hsin-Chu TW
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