发明名称 |
In-Situ Charging Neutralization |
摘要 |
Some embodiments relate to a method for semiconductor processing. In this method, a semiconductor wafer is provided. A surface region of the semiconductor wafer is probed to determine whether excess charge is present on the surface region. Based on whether excess charge is present, selectively inducing a corona discharge to reduce the excess charge. Other techniques are also provided. |
申请公布号 |
US2014210506(A1) |
申请公布日期 |
2014.07.31 |
申请号 |
US201313753627 |
申请日期 |
2013.01.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
Wu Lin-Jung;Hsu Jyh-Shiou;Yang Chi-Ming |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
1. A method, comprising:
providing a semiconductor wafer; probing a surface region of the semiconductor wafer to determine whether a charge condition is present on the surface region; and based on whether the charge condition is present, selectively inducing a corona discharge to alter the charge condition. |
地址 |
Hsin-Chu TW |