METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A VERTICAL NANOWIRE

摘要

A method provided by the present invention includes a step of providing a semiconductor structure which includes a substrate and a nanowire on the substrate. The nanowire includes a first semiconductor material and is extended in the first direction of the substrate. A material layer is formed on the substrate. The material layer surrounds the nanowire in a circular shape. A first part of the nanowire is selectively removed from the material layer. A second part of the nanowire does not removed. An end part of the second part of the nanowire in the far side from the substrate is positioned to be closer to the substrate than the surface of the material layer so that the semiconductor structure has a recess in the position of the nanowire. The end part of the nanowire is exposed from the bottom of the recess. The recess is filled with a second semiconductor material. The second semiconductor material has a doping which is different from the first semiconductor material.