发明名称 PATTERN FORMATION METHOD AND PATTERN FORMATION APPARATUS
摘要 According one embodiment, a pattern formation method forming a resist layer on a pattern formation surface by pressing a template provided with a concave-convex from above the resist layer to form a resist pattern on the pattern formation surface, includes: forming a resist layer in a first region having an area smaller than an area of the pattern formation surface and in a second region other than the first region of the pattern formation surface; pressing a template against the resist layer; irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed, and form the resist pattern including a second resist layer, curing of the second resist layer proceeds in the second region; and removing the first resist layer from the first region, the curing of the first resist layer being suppressed.
申请公布号 US2014213058(A1) 申请公布日期 2014.07.31
申请号 US201313953921 申请日期 2013.07.30
申请人 Kabushiki Kaisha Toshiba 发明人 Matsunaga Kentaro;Komine Nobuhiro;Yoneda Eiji
分类号 H01L21/308;H01L21/67 主分类号 H01L21/308
代理机构 代理人
主权项 1. A pattern formation method forming a resist layer on a pattern formation surface by pressing a template provided with a concave-convex from above the resist layer to form a resist pattern on the pattern formation surface, the method comprising: forming a resist layer in a first region having an area smaller than an area of the pattern formation surface and in a second region other than the first region of the pattern formation surface; pressing a template against the resist layer; irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed, and form the resist pattern including a second resist layer, curing of the second resist layer proceeds in the second region; and removing the first resist layer from the first region.
地址 Minato-ku JP