Hybrid Interconnect Scheme and Methods for Forming the Same

摘要

A device includes a first low-k dielectric layer, and a copper-containing via in the first low-k dielectric layer. The device further includes a second low-k dielectric layer over the first low-k dielectric layer, and an aluminum-containing metal line over and electrically coupled to the copper-containing via. The aluminum-containing metal line is in the second low-k dielectric layer.

主权项

1. A method comprising:
forming a first via in a first low-k dielectric layer using a single damascene process; depositing an aluminum-containing layer over the first via; patterning the aluminum-containing layer to form an aluminum-containing line, wherein the aluminum-containing line is electrically coupled to the first via; and forming a second low-k dielectric layer over the first low-k dielectric layer, wherein the aluminum-containing line is in the second low-k dielectric layer.