BIPOLAR DIODE HAVING AN OPTICAL QUANTUM STRUCTURE ABSORBER

摘要

The invention relates to a novel silicon-based, single-stage solar cell which, instead of converting light in a bulk semiconductor material, generates electrical energy within a very thin quantum structure that is deposited. The layer sequence itself consists of a three-fold hetero structure as an absorber, which is embedded into the space charge region of a pn-junction and is based on quantummechanical effects.;Therein, the layer is preferably deposited by a CVD or the like method. High efficiencies of above 30% were initially measured on small samples on silicon.

主权项

1. A bipolar semiconductor device for converting light into electrical current or electrical current into light, said device comprising:
a) a first layer consisting of p-doped semiconductor material with a band gap X, b) a second layer consisting of a material with a larger band gap Y and having a thickness such that charge carriers are able to tunnel therethrough, c) a third layer consisting of a material with a smaller band gap Z and of a material having a high light absorption, d) a fourth layer consisting of a material with a larger band gap Y and having a thickness such that charge carriers are able to tunnel therethrough, and e) a fifth layer consisting of a n-doped semiconductor material having a band gap X and is sufficiently thin that incident light can reach the layers of b), c), d), and e).