发明名称 |
CONTROL OF P-CONTACT RESISTANCE IN A SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A device according to embodiments of the invention includes a semiconductor device structure (10) including a light emitting region (14) disposed between an n-type semiconductor region (16) and a p-type semiconductor region (12). A surface of the p-type semiconductor region (12) perpendicular to a growth direction of the semiconductor device structure (10) includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact (21) disposed on the p-type semiconductor region (12) and an n-contact (26) disposed on the n-type semiconductor region (16). The p-contact (21) includes a contact metal layer (20) and a blocking material layer (24). The blocking material layer (24) is disposed over the first portion and no blocking material layer (24) is disposed over the second portion. |
申请公布号 |
WO2014115060(A1) |
申请公布日期 |
2014.07.31 |
申请号 |
WO2014IB58275 |
申请日期 |
2014.01.15 |
申请人 |
KONINKLIJKE PHILIPS N.V. |
发明人 |
CHOY, KWONG-HIN, HENRY |
分类号 |
H01L21/225;H01L21/02;H01L21/285;H01L33/00;H01L33/08;H01L33/14;H01L33/20;H01L33/22;H01L33/32;H01L33/40;H01L33/42 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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