| 摘要 |
The invention relates to a semiconductor structure (1) suitable for emitting electromagnetic radiation. The structure (1) comprises a first and a second area (10, 20) respectively having a first and a second mutually opposite type of conductivity, said first and second areas (10, 20) being connected to one another such as to form a semiconductor junction. The first area (10) comprises at least a first and a second portion (11, 12), the first and the second portion (11, 12) being separated from one another by an intermediate layer (13), referred to as a dispersion layer, and extending substantially parallel to the junction plane along a major portion of the junction. The dispersion layer (13) is suitable for causing a dispersion of the carriers along the plane of the dispersion layer (13). |
