EPITAXIAL PROCESS

摘要

An epitaxial process includes the following steps. A substrate including a first area and a second area is provided. A first gate and a second gate are formed respectively on the substrate of the first area and the second area. A first spacer and a second spacer are respectively formed on the substrate beside the first gate and the second gate at the same time. A first epitaxial structure is formed beside the first spacer and then a second epitaxial structure is formed beside the second spacer by the first spacer and the second spacer respectively.

主权项

1. An epitaxial process, comprising:
providing a substrate comprising a first area and a second area; forming a first gate and a second gate respectively on the substrate of the first area and the second area; forming a first spacer and a second spacer respectively on the substrate beside the first gate and the second gate at the same time; and forming a first epitaxial structure beside the first spacer and then forming a second epitaxial structure beside the second spacer, wherein the first spacer and the second spacer define the locations of the first epitaxial structure and the second epitaxial structure respectively.