发明名称 PLASMA ACTIVATED CONFORMAL FILM DEPOSITION
摘要 Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
申请公布号 US2014209562(A1) 申请公布日期 2014.07.31
申请号 US201414231554 申请日期 2014.03.31
申请人 Novellus Systems, Inc. 发明人 LaVoie Adrien;Swaminathan Shankar;Kang Hu;Chandrasekharan Ramesh;Dorsh Tom;Hausmann Dennis M.;Henri Jon;Jewell Thomas;Li Ming;Schlief Bryan;Xavier Antonio;Mountsier Thomas W.;van Schravendijk Bart J.;Srinivasan Easwar;Sriram Mandyam
分类号 H01L21/02;C23C16/04;C23C16/455 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of depositing a film on a substrate surface, the method comprising: (a) providing a substrate in a reaction chamber; (b) introducing a first reactant in vapor phase into the reaction chamber under conditions allowing the first reactant to adsorb onto the substrate surface; (c) introducing a second reactant in vapor phase into the reaction chamber while the first reactant is adsorbed on the substrate surface, wherein the second reactant is introduced without first sweeping the first reactant out of the reaction chamber; (d) exposing the substrate surface to plasma to drive a surface reaction between the first and second reactants on the substrate surface to form the film; and (e) introducing the first reactant in vapor phase and second reactant in vapor phase into the reaction chamber concurrently to thereby deposit additional film by a chemical vapor deposition non-surface gas phase reaction directly on the film formed in (d), wherein there is a transition phase between operations (d) and (e) in which the surface reaction between the first and second reactants and the chemical vapor deposition non-surface gas phase reaction take place concurrently.
地址 Fremont CA US