SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.

主权项

1. A semiconductor device, comprising:
gate electrodes on a semiconductor substrate; spacers on side surfaces of the gate electrodes; capping patterns on the gate electrodes; and a metal contact between the gate electrodes, wherein a width of each of the capping patterns is greater than a width of each of the gate electrodes.