发明名称 MEMORY DEVICE HAVING A LOCAL CURRENT SINK
摘要 A memory device having a local current sink is disclosed. In a particular embodiment, an electronic device is disclosed. The electronic device includes one or more write drivers. The electronic device includes at least one Magnetic Tunnel Junction (MTJ) coupled to a bit line and coupled to a source line. The electronic device also includes a current sink circuit comprising a single transistor, the single transistor coupled to the bit line and to the source line.
申请公布号 KR101424663(B1) 申请公布日期 2014.07.31
申请号 KR20127032513 申请日期 2011.05.10
申请人 发明人
分类号 G11C11/15;G11C11/16;G11C29/02 主分类号 G11C11/15
代理机构 代理人
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