Method of Making a FinFET Device

摘要

A FinFET device is fabricated by first receiving a FinFET precursor. The FinFET precursor includes a substrate, fins on the substrate, isolation regions on sides of the fins and dummy gate stacks on the substrate including wrapping a portion of the fin, which is referred to as a gate channel region. The dummy gate stacks is removed to form a gate trench and a gate dielectric layer is deposited in the gate trench. A metal stressor layer (MSL) is conformably deposited on the gate dielectric layer. A capping layer is deposited on the MSL. A thermal treatment is applied to the MSL to achieve a volume expansion. Then the capping layer is removed and a metal gate (MG) is formed on the MSL.

主权项

1. A method for fabricating a fin-type field-effect transistor (FinFET) device, the method comprising:
receiving a FinFET precursor, the FinFET precursor including: a substrate; fins on the substrate; isolation regions on sides of the fins; and dummy gate stacks on the substrate including a portion wrapping the fin; removing the dummy gate stacks to form a gate trench; depositing a gate dielectric layer in the gate channel region in the gate trench; forming a metal stressor layer (MSL) on the gate dielectric layer; depositing a capping layer on the MSL; performing a thermal treatment to the MSL; removing the capping layer after the thermal treatment; and forming a metal gate (MG) on the MSL.