METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device includes: forming, in element regions of a semiconductor wafer, electrodes and a insulator on peripheral part of the electrodes so that a height of the insulator is higher than that of the electrodes; forming, on the front face of the semiconductor wafer, a groove for surrounding a periphery of the electrodes with the insulator being sandwiched between the electrodes and the groove, the groove being formed so that a height of the groove is lower than that of the insulator and the groove extends to an outer circumferential edge of the semiconductor wafer; bonding adhesives onto the electrodes in the element regions so that a height of the adhesives is higher than that of the insulator, and bonding, onto the adhesives, a base material for covering the front face of the semiconductor wafer; and processing a rear face of the semiconductor wafer.

主权项

1. A method for manufacturing a semiconductor device, the method comprising:
forming, in each of a plurality of element regions of a semiconductor wafer, surface electrodes and a insulating layer on peripheral parts of the surface electrodes so that a height of the insulating layer from a front face of the semiconductor wafer is higher than that of the surface electrodes; forming, on the front face of the semiconductor wafer, a dicing line groove for surrounding a periphery of the surface electrodes with the insulating layer being sandwiched between the surface electrodes and the dicing line groove in a plane view, the dicing line groove being formed so that a height of the dicing line groove from the front face of the semiconductor wafer is lower than that of the insulating layer and the dicing line groove extends to an outer circumferential edge of the semiconductor wafer; after forming the dicing line groove, bonding adhesive layers onto the surface electrodes in the each of the plurality of element regions so that a height of the adhesive layers from the front face of the semiconductor wafer is higher than that of the insulating layer, and bonding, onto a front side of the adhesive layers, a base material for covering the front face of the semiconductor wafer; and processing a rear face of the semiconductor wafer of which the front face is covered with the base material.