发明名称 |
SEMICONDUCTOR APPARATUS INCLUDING AN OPTICAL DEVICE AND AN ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A method of manufacturing a semiconductor apparatus includes forming a gate structure and an etch stop layer structure on a substrate including first and second regions. The gate structure is formed in the first region, and the etch stop layer structure is formed in the second region. A first insulating interlayer is formed on the substrate to cover the gate structure and the etch stop layer structure. The first insulating interlayer is partially removed to expose the etch stop layer structure. The exposed etch stop layer is removed to expose the substrate. An optical device is formed on the exposed substrate. |
申请公布号 |
US2014212087(A1) |
申请公布日期 |
2014.07.31 |
申请号 |
US201414163069 |
申请日期 |
2014.01.24 |
申请人 |
Samsung Electronics Co., Ltd |
发明人 |
CHO Kwan-Sik;KIM Jung-Hye;SHIN Yong-Hwack |
分类号 |
G02B6/136 |
主分类号 |
G02B6/136 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of manufacturing a semiconductor apparatus, the method comprising:
forming a gate structure and an etch stop layer structure on a substrate including first and second regions, the gate structure being formed in the first region, and the etch stop layer structure being formed in the second region; forming a first insulating interlayer on the substrate to cover the gate structure and the etch stop layer structure; partially removing the first insulating interlayer to expose the etch stop layer structure; removing the exposed etch stop layer to expose the substrate; and forming an optical device on the exposed substrate. |
地址 |
Suwon-si KR |