A method of manufacturing a semiconductor device includes: forming a first trench in a first area of a drift layer that has a surface including the first area and a second area; growing a crystal of a p-type base layer on a surface of the drift layer after forming the first trench; and growing a crystal of an n-type source layer on a surface of the base layer. Material of the drift layer, the base layer, and the source layer are a wide-gap semiconductor.
申请公布号
WO2014115494(A1)
申请公布日期
2014.07.31
申请号
WO2014JP00060
申请日期
2014.01.09
申请人
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO;TOYOTA JIDOSHA KABUSHIKI KAISHA;DENSO CORPORATION