<p>Provided is a method for fabricating a semiconductor device. The method for fabricating a semiconductor device includes exposing an active region and a device isolation region by patterning an etch prevention layer which is formed on a substrate which includes the active region and the device isolation region; nitrifying the upper surface of the exposed device isolation region by performing a plasma nitridation process; forming a first recess in the exposed active region; and forming a stress generation layer in the first recess.</p>
申请公布号
KR20140094722(A)
申请公布日期
2014.07.31
申请号
KR20130006603
申请日期
2013.01.21
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHA, JI HOON;BAEK, JAE JIK;YOON, BO UN;YOUN, YOUNG SANG;HAN, JEONG NAM