SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having a P-type region, on at least one main surface of which integrated circuits are formed; one or more via electrodes inserted into the P-type region of the semiconductor substrate; a dielectric layer formed between the semiconductor substrate and the via electrodes; an N-type region, which is formed in the semiconductor substrate to contact a portion of the dielectric layer and to expose other portion of the dielectric layer; and a power circuit, which is electrically connected to the N-type region and apply a bias voltage or a ground voltage thereto, such that electric signals flowing in the via electrodes form an inversion layer on a surface of the semiconductor substrate facing the exposed portion of the dielectric layer.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a P-type region and at least one surface with integrated circuits formed thereon; at least one via electrode extending in the semiconductor substrate; a dielectric layer formed between the semiconductor substrate and the at least one via electrode, the dielectric layer including a first portion, and a second portion that faces the P-type region of the semiconductor substrate; an N-type region formed in the semiconductor substrate to contact the first portion of the dielectric layer; and a power circuit, which is electrically connected to the N-type region and applies a bias voltage or a ground voltage thereto, such that electric signals flowing in the via electrodes form an inversion layer on a surface of the p-type region of semiconductor substrate facing the second portion of the dielectric layer.