NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores.

主权项

1. A method of manufacturing a nanostructure semiconductor light emitting device, the method comprising:
providing a base layer formed of a first conductivity type semiconductor; forming a mask including an etch stop layer, on the base layer; forming, in the mask, a plurality of openings so as to expose regions of the base layer thereto; forming a plurality of nanocores by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings; partially removing the mask by using the etch stop layer to expose side portions of the plurality of nanocores; and sequentially growing an active layer and a second conductivity type semiconductor layer on surfaces of the plurality of nanocores.