| 摘要 |
The present invention relates to an electron-hole bilayer tunnel field effect transistor having a symmetric PMOS and NMOS double gate structure and a fabrication method for the same. The electron-hole bilayer tunnel field effect transistor increases an operation current and a gradient under a threshold voltage by using a double gate p-i-n structure and tunneling between bands and reduces supply power by decreasing the threshold voltage which has a symmetric double gate structure which can be realized by a gate of a symmetric structure. |
