| 摘要 |
An embodiment of the present invention provides a method for manufacturing a sapphire ingot, comprising: step (a) for measuring the ratio of the voltage drop of a heater per unit height of a seed while lowering the seed inside a crucible toward sapphire melt; step (b) for arranging the seed inside the crucible at a predetermined height; and step (c) for dropping the voltage of the heater according to the ratio obtained in step (a) while lowering the seed. |
