SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要
<p>A semiconductor device is provided. The semiconductor device comprises an interlayer insulating film formed on a substrate and including a trench; a gate insulating film formed in the trench; a density of interface trap (DIT) improvement film improving the DIT of the substrate; and a first conductivity type work function control film formed on the DIT improvement film.</p>
申请公布号
KR20140094335(A)
申请公布日期
2014.07.30
申请号
KR20130007048
申请日期
2013.01.22
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
SONG, JAE YEOL;LEE, JUNE HEE;LEE, HYE LAN;HYUN, SANG JIN;KANG, SANG BOM