| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a charged-particle beam resolution measuring method and a charged-particle beam lithography apparatus, which finds the beam resolution of the lithography apparatus itself. <P>SOLUTION: This electron beam lithography apparatus has: a radiation section 10 that radiates electron beam 54; a detector 32 that detects reflective signals obtained by scanning the electron beam 54 on marks 101 and 102; and a resolution acquisition section 35 that obtains the resolution of the electron beam 54 by fitting waveforms based on the reflective signals, by using an approximate expression defined by two shape functions that correspond to the marks 101 and 102 and an error function. <P>COPYRIGHT: (C)2011,JPO&INPIT |
