发明名称 |
POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD |
摘要 |
In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle 9 and metal electrodes 10 that are provided in a reactor is appropriately designed. The area of a disc-like base plate 5 is So. An imaginary concentric circle C (radius c) centered at the center of the disc-like base plate 5 has an area S = So / 2. Further, a concentric circle A and a concentric circle B are imaginary concentric circles having the same center as that of the concentric circle C and having a radius a and a radius b, respectively (a < b < c). In the present invention, the electrode pairs 10 are placed inside of the imaginary concentric circle C and outside of the imaginary concentric circle B, and the gas supplying nozzle 9 is placed inside of the imaginary concentric circle A. |
申请公布号 |
EP2759520(A1) |
申请公布日期 |
2014.07.30 |
申请号 |
EP20120833313 |
申请日期 |
2012.09.20 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KUROSAWA, YASUSHI;NETSU, SHIGEYOSHI;HOSHINO, NARUHIRO |
分类号 |
C01B33/035;C23C16/24;C23C16/44;H01L21/02 |
主分类号 |
C01B33/035 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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