发明名称 METHOD FOR REMOVING IMPURITY IN SILICON WAFER
摘要 A method of removing impurities from a silicon wafer according to an embodiment includes the steps of performing a grinding or polishing process by which a surface of the wafer is damaged; performing a low-temperature heating process to allow diffusion of a metal bulk in the wafer toward the surface of the wafer; and performing a process of wet etching the surface of the wafer after the low-temperature heating process.
申请公布号 KR20140094114(A) 申请公布日期 2014.07.30
申请号 KR20130006365 申请日期 2013.01.21
申请人 LG SILTRON INCORPORATED 发明人 LEE, SEUNG WOOK;JEONG, EUN DO
分类号 H01L21/306;H01L21/304 主分类号 H01L21/306
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