发明名称 |
METHOD FOR REMOVING IMPURITY IN SILICON WAFER |
摘要 |
A method of removing impurities from a silicon wafer according to an embodiment includes the steps of performing a grinding or polishing process by which a surface of the wafer is damaged; performing a low-temperature heating process to allow diffusion of a metal bulk in the wafer toward the surface of the wafer; and performing a process of wet etching the surface of the wafer after the low-temperature heating process. |
申请公布号 |
KR20140094114(A) |
申请公布日期 |
2014.07.30 |
申请号 |
KR20130006365 |
申请日期 |
2013.01.21 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
LEE, SEUNG WOOK;JEONG, EUN DO |
分类号 |
H01L21/306;H01L21/304 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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