| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor, capable of obtaining a low-priced and fine thin-film transistor, while maintaining high performance. SOLUTION: The method has a step of forming a sacrificial layer at a region corresponding to at least a channel part on the surface of a base layer in which a source electrode and a drain electrode are formed, a step of depositing and patterning an electrode material containing a component having liquid repellency against a semiconductor solution on the surface of a transfer plate, a step of transferring the patterned electrode material on the base layer with the sacrificial layer formed thereon, by using a transfer printing method, to form the source electrode and the drain electrode, a step of diffusing the component having the liquid repellency contained in the electrode material to form a liquid repellent layer on the surface of the source electrode and the drain electrode, a step of removing the sacrificial layer formed in the channel part, and a step of applying the semiconductor solution to the channel with the sacrificial layer removed therefrom by using a droplet coating method to form a semiconductor film. COPYRIGHT: (C)2011,JPO&INPIT |
