| 摘要 |
<p>Provided is a method of etching a multilayer film including an organic film formed between first and second oxide films. In this method, a high frequency power for generating plasma in etching the organic film is greater than those in etching the first and second oxide films. High frequency bias powers for ion implantation in the etching of the first and second oxide films are greater than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line than those of the horizontal magnetic field components of the first and second oxide films.</p> |
