发明名称 Surface-treated fluorescent material and process for producing surface-treated fluorescent material
摘要 Provided are a surface treated phosphor having high dispersibility and remarkably improved moisture resistance without degradation in fluorescence properties, and a method of producing the surface treated phosphor.;The present invention relates to a surface treated phosphor including: a phosphor matrix including an alkaline earth metal and silicon; and a surface treatment layer including an alkaline earth metal, silicon, and a specific element belonging to groups 4 to 6 of the periodic table, wherein, when element distribution of the surface treatment layer in the thickness direction viewed in cross-section is determined by electron microscopy and energy dispersive X-ray spectroscopy coupled with the electron microscopy, the position representing the maximum peak of a specific element content is located closer to the surface than the position representing the maximum peak of a silicon content and silicon contents of the phosphor matrix and the surface treatment layer satisfy the following formula (1): [Formula 1]S1<S2  (1)wherein S1 represents the silicon content of the phosphor matrix and S2 represents the silicon content of the surface treatment layer.
申请公布号 US8791488(B2) 申请公布日期 2014.07.29
申请号 US201113813532 申请日期 2011.08.04
申请人 Sekisui Chemical Co., Ltd. 发明人 Sun Ren-de;Nakatani Yasuhiro;Oomura Takahiro
分类号 H01L33/00;H01L33/50;H05B33/14;C09K11/77 主分类号 H01L33/00
代理机构 Wenderoth, Lind &amp; Ponack, L.L.P. 代理人 Wenderoth, Lind &amp; Ponack, L.L.P.
主权项 1. A surface treated phosphor comprising: a phosphor matrix including an alkaline earth metal and silicon; and a surface treatment layer including an alkaline earth metal, silicon, and a specific element belonging to groups 4 to 6 of the periodic table, wherein, when element distribution of the surface treatment layer in the thickness direction viewed in cross-section is determined by electron microscopy and energy dispersive X-ray spectroscopy coupled with the electron microscopy, the position representing the maximum peak of the specific element content is located closer to an upper surface of the surface treatment layer than the position representing the maximum peak of a silicon content in the surface treatment layer and silicon contents of the phosphor matrix and the surface treatment layer satisfy the following formula (1): [Formula 1]S1<S2  (1) wherein S1 represents the silicon content in the phosphor matrix and S2 represents the silicon content in the surface treatment layer.
地址 Osaka JP