发明名称 |
Stamp having nanoscale structure and applications therefore in light-emitting device |
摘要 |
A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer. |
申请公布号 |
US8791029(B2) |
申请公布日期 |
2014.07.29 |
申请号 |
US200812222548 |
申请日期 |
2008.08.12 |
申请人 |
Epistar Corporation |
发明人 |
Yao Chiu-Lin;Hsu Ta-Cheng;Hsieh Min-Hsun |
分类号 |
H01L21/461 |
主分类号 |
H01L21/461 |
代理机构 |
Bacon & Thomas, PLLC |
代理人 |
Bacon & Thomas, PLLC |
主权项 |
1. A method of forming a nanoscale stamp structure comprising the steps of:
forming a substrate; forming a buffer layer on the substrate; and forming a stamp layer directly on entire one surface of the buffer layer, wherein the surface of the stamp layer has a nanoscale structure and the material of the stamp layer is un-doped gallium nitride; and wherein the step of forming the nanoscale structure on the surface of the stamp layer on the buffer layer comprises etching the stamp layer by KOH for 3 minutes to form the surface of the stamp layer in a serrated shape or triangle shape ranging in size from 10 nm to 1,000 nm and with a period in range of 20 nm to 2,000 nm. |
地址 |
Hsinchu TW |