Methods and apparatus for manufacturing semiconductor devices

摘要

In accordance with the teachings of the present disclosure, methods and apparatus are provided for a semiconductor device having thin anti-reflective layer(s) operable to absorb radiation that may otherwise reflect off surfaces disposed inwardly from the anti-reflective layer(s). In a method embodiment, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. The method further includes forming an anti-reflective layer outwardly from the first outer sidewall surface. The anti-reflective layer has: a second outer sidewall surface that is not parallel with the substrate, a second refractive index that is greater than the first minimum refractive index, and a second thickness that is less than the first thickness.

主权项

1. A method of manufacturing a semiconductor device comprising:
providing a substrate; forming a dielectric layer over the substrate; forming conductive support structures for elements of a microelectromechanical system (MEMS) device at laterally spaced intervals and disposed outwardly from the dielectric layer; forming an anti-reflective layer by blanket deposition over the support structures and dielectric layer, the anti-reflective layer having an index of refraction greater than a minimum index of refraction of materials forming surfaces, including sidewalls, of the support structures; selectively removing portions of the anti-reflective layer from over the dielectric layer centrally in the intervals between the support structures, leaving other portions of the anti-reflective layer remaining over the sidewalls and top surfaces of the support structures, respective ones of the remaining portions encasing corresponding ones of the support structures; forming an anti-reflective coating (ARC) oxide layer over the remaining portions of the anti-reflective layer; and selectively removing portions of the ARC oxide layer to expose corresponding portions of the support structure top surfaces for conductive contact with the MEMS device elements.