Implant damage control by in-situ C doping during sige epitaxy for device applications

摘要

Some example embodiments of the invention comprise methods for and semiconductor structures comprised of: a MOS transistor comprised of source/drain regions, a gate dielectric, a gate electrode, channel region; a carbon doped SiGe region that applies a stress on the channel region whereby the carbon doped SiGe region retains stress/strain on the channel region after subsequent heat processing.

主权项

1. A device comprising:
a substrate having a device region; a p-type transistor on the device region of the substrate, wherein the transistor comprises
a gate,source and drain (S/D) regions adjacent to the gate, wherein a bottom of the S/D regions is disposed below a bottom of source-drain extension (SDE) regions, anda channel region under the gate between the S/D regions; at least one recess in the substrate; and a stressor region disposed in at least a portion of the recess in the substrate to apply a stress on the channel region, the stressor region comprises a carbon doped silicon germanium (SiGe) stressor layer having EOR defects, wherein a bottom of the stressor layer is disposed at least below the EOR defects, and wherein the carbon doped SiGe stressor layer comprises an amount of carbon which reduces the amount of EOR defects in order to reduce relaxation of the stress in the stressor layer.