| 摘要 |
An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film. A fourth insulating film (1208) and a partitioning layer (1209) formed on the upper layer side of the organic light emitting element (1202) are formed using similar inorganic insulating films. |
| 主权项 |
1. A method of manufacturing a display device comprising:
forming a first insulating film over and in contact with a first substrate; forming a thin film transistor over the first insulating film; forming a second insulating film over the thin film transistor; forming an organic resin interlayer insulating film over the second insulating film; forming a third insulating film over the organic resin interlayer insulating film; forming an anode over the third insulating film; forming a layer comprising an organic resin over the anode; forming a partitioning layer comprising an inorganic insulating material, and formed over and in contact with the anode and the layer so as to cover the layer and an edge portion of the anode; forming a light emitting layer comprising an organic compound, and formed over the partitioning layer, forming a cathode over the light emitting layer; forming a protective film over and in contact with the cathode, the protective film in contact with the first insulating film in a first region; forming a sealing material in direct contact with the protective film, the sealing material overlapped with the first region; attaching a second substrate to the first substrate by using the sealing material; and forming a gas partitioning layer in contact with the protective film, the second substrate, and the sealing material, wherein the sealing material and the gas partitioning layer is formed between the first substrate and the second substrate, wherein the gas partitioning layer is attached to outer side of the sealing material, and wherein the gas partitioning layer is formed by a material selected from the group consisting of silicon nitride, silicon oxynitride, diamond like carbon, carbon nitride, aluminum oxide, aluminum nitride, and aluminum oxynitride. |
