发明名称 Optical semiconductor device
摘要 An optical semiconductor device includes an optical semiconductor element and an optical waveguide butt-joined to the optical semiconductor element. The optical semiconductor element has a mesa structure including an active layer and a burying layer coating side faces of the active layer. The optical waveguide has a mesa structure including an optical waveguide layer having a layer structure different from the active layer, and a burying layer coating side faces of the optical waveguide layer. Mesa width of the optical waveguide is narrower than mesa width of the optical semiconductor element.
申请公布号 US8792756(B2) 申请公布日期 2014.07.29
申请号 US201213572753 申请日期 2012.08.13
申请人 Mitsubishi Electric Corporation 发明人 Takiguchi Tohru
分类号 G02B6/12 主分类号 G02B6/12
代理机构 Leydig, Voit & Mayer, Ltd. 代理人 Leydig, Voit & Mayer, Ltd.
主权项 1. An optical semiconductor device comprising: an optical semiconductor element, wherein the optical semiconductor element has a mesa structure having a mesa width and including an active layer, and a burying layer coating side faces of the active layer; a first optical waveguide, wherein the first optical waveguide has a mesa structure having a mesa width and including a first optical waveguide layer, and having a layer structure different from the active layer of the optical semiconductor element, and a burying layer coating side faces of the first optical waveguide layer, wherein the mesa width of the first optical waveguide is narrower than the mesa width of the optical semiconductor element, andthe optical semiconductor element is butt joined to the first optical waveguide; and separating channels extending along opposite sides of the active layer and of the first optical waveguide layer, in the burying layers of the optical semiconductor element and the first optical waveguide, and defining the mesa structures between the separating channels so that separations between the separating channels are the mesa widths.
地址 Tokyo JP