Light-emitting device and method of manufacturing the same

摘要

Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 μm. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.

主权项

1. A light-emitting device comprising:
a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, an active layer formed of a compound semiconductor, and a second compound semiconductor layer of a second conductivity type different from the first conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer, wherein the layer structure has a configuration formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer, the first compound semiconductor layer has a thickness greater than 0.6 μm, and a high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.