发明名称 |
High-beta bipolar junction transistor and method of manufacture |
摘要 |
An NPN bipolar junction transistor is disclosed that exhibits a collector-to-emitter breakdown voltage greater than 10 volts and a beta greater than 300. The large value of beta is obtained by fabricating the transistor with an extra N-type layer that reduces recombination of electrons and holes. |
申请公布号 |
US8790984(B2) |
申请公布日期 |
2014.07.29 |
申请号 |
US201313842236 |
申请日期 |
2013.03.15 |
申请人 |
Macronix International Co., Ltd. |
发明人 |
Lin Cheng-Chi;Tu Shuo-Lun;Lien Shih-Chin |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
Stout, Uxa, Buyan & Mullins |
代理人 |
Stout, Uxa, Buyan & Mullins ;Uxa Frank J. |
主权项 |
1. A method, comprising:
providing a base wafer; implanting atoms of a first conductivity type as a dopant into a region of the base wafer; driving the implanted atoms to a depth sufficient to form a first well; patterning and implanting atoms of the first conductivity type to form a second well inside the region to a dopant concentration greater than a concentration of the dopant in the region; patterning and implanting atoms of a second conductivity type to form a third well inside the second well; and patterning and implanting atoms of the first conductivity type to form a layer overlying the third well; driving the implanted atoms to a depth sufficient to form the second well and the third well by subjecting the wafer to a high temperature greater than about 1000 degrees C.; performing a field oxide process that defines an emitter region having a rectangular shape disposed in a center portion of the layer, a base region having a shape of a rectangular ring surrounding and concentric with the emitter region, and a collector region having a shape of a rectangular ring surrounding and concentric with the base region, the emitter region, the base region and the collector region being isolated from each other; patterning and implanting atoms of the first conductivity type in the emitter and collector regions, whereby the emitter and collector regions are doped to a higher concentration than that of the layer and whereby the emitter extends through the layer into the third well and the collector region extends into the second well; and patterning and implanting atoms of the second conductivity type in the base region, whereby the base region is doped to a higher concentration than that of the third well and whereby the base region extends through the layer into the third well. |
地址 |
Hsinchu TW |