Interdigitated conductive support for GaN semiconductor die

摘要

A GaN die having a plurality of parallel alternating and closely spaced source and drain strips is contacted by parallel coplanar comb-shaped fingers of source and drain pads. A plurality of enlarged area coplanar spaced gate pads having respective fingers contacting the gate contact of the die. The pads may be elements of a lead frame, or conductive areas on an insulation substrate. Other semiconductor die can be mounted on the pads and connected in predetermined circuit arrangements with the GaN die.

主权项

1. A conductive support for a GaN semiconductor die comprising a plurality of parallel spaced and interleaved source and drain electrode strips on a surface of said GaN semiconductor die;
said conductive support having a source pad and a coplanar drain pad; said source and drain pads each having a plurality of fingers and an enlarged area; said fingers of said source and drain pads being interdigitated and parallel to one another and spaced from one another; said fingers of said source and drain pads being disposed in alignment with and in contact with respective ones of said source and drain electrode strips; a second semiconductor die having source and drain electrodes, said drain electrode of said second semiconductor die being conductively fixed to one of said source or drain pads, said source electrode of said second semiconductor die and a gate electrode of said GaN semiconductor die being connected to a gate pad of said conductive support.