Semiconductor device including gate and conductor electrodes

摘要

An object is to provide a field effect transistor (FET) having a conductor-semiconductor junction, which has excellent characteristics, which can be manufactured through an easy process, or which enables high integration. Owing to the junction between a semiconductor layer and a conductor having a work function lower than the electron affinity of the semiconductor layer, a region into which carriers are injected from the conductor is formed in the semiconductor layer. Such a region is used as an offset region of the FET or a resistor of a semiconductor circuit such as an inverter. Further, in the case of setting up such an offset region and a resistor in one semiconductor layer, an integrated semiconductor device can be manufactured.

主权项

1. A semiconductor device comprising:
a semiconductor layer comprising an offset region; a first conductor electrode and a second conductor electrode over and in contact with one surface of the semiconductor layer; and a gate over the semiconductor layer, wherein the offset region is provided in at least one of a region between the first conductor electrode and the gate and a region between the second conductor electrode and the gate, wherein the offset region of the semiconductor layer comprises an oxide semiconductor, and wherein a carrier concentration of the oxide semiconductor is lower than or equal to 1012/cm3.