Resistive random access memory (RRAM) using stacked dielectrics and method for manufacturing the same

摘要

Resistive random access memory (RRAM) using stacked dielectrics and a method for manufacturing the same are disclosed, where a setting power of only 4 μW, an ultra-low reset power of 2 nW, good switching uniformity and excellent cycling endurance up to 5×109 cycles were achieved simultaneously. Such record high performances were reached in a Ni/GeOx/nano-crystal-TiO2/TaON/TaN RRAM device, where the excellent endurance is 4˜6 orders of magnitude larger than existing Flash memory. The very long endurance and low switching energy RRAM is not only satisfactory for portable SSD in a computer, but may also create new applications such as being used for a Data Center to replace high power consumption hard discs.

主权项

1. A resistive random access memory (RRAM) using stacked dielectrics, wherein the RRAM is formed by the stacked dielectrics composed of semiconductor-oxide, nano-crystal (nc) metal-oxide, and metal-oxynitride, wherein the nc metal-oxide is stacked between the semiconductor-oxide and the metal-oxynitride,
wherein at least the nc metal-oxide is formed of a different material than the semiconductor-oxide, and wherein the nc metal oxide is formed of TiO2, the semiconductor-oxide is formed of GeOx, and the metal-oxynitride is formed of TaON.