发明名称 Gas supply system, substrate processing apparatus and gas supply method
摘要 A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.
申请公布号 US8790529(B2) 申请公布日期 2014.07.29
申请号 US201113012623 申请日期 2011.01.24
申请人 Tokyo Electron Limited 发明人 Hayasaka Shinichiro;Horiuchi Ken;Yagi Fumiko;Yokouchi Takeshi
分类号 C23F1/12 主分类号 C23F1/12
代理机构 Rothwell, Figg, Ernst & Manbeck, P.C. 代理人 Rothwell, Figg, Ernst & Manbeck, P.C.
主权项 1. A gas supply method for use with a gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed, wherein the gas supply system includes a processing gas supply unit for supplying a processing gas for processing the substrate to be processed; a processing gas supply line for allowing the processing gas from the processing gas supply unit to flow therein; a first and a second branch line branched from the processing gas supply line to be connected with different portions of the processing chamber; a branch flow control unit for controlling branch flows of the processing gas distributed from the processing gas supply line to the first and the second branch line based on inner pressures of the first and the second branch line, respectively; an additional gas supply unit for supplying an additional gas; and an additional gas supply line, joining the second branch line at a downstream side of the branch flow control unit, for allowing the additional gas from the additional gas supply unit to flow therein, the method comprising, before processing the substrate to be processed: performing a control of supplying the processing gas at a first set flow rate from the processing gas supply unit; performing a control of supplying the additional gas at an initial flow rate greater than a second set flow rate and then at the second set flow rate after a lapse of a period of time; and determining, before the performing the control of supplying the processing gas, the initial flow rate based on a volume of the additional gas supply line in which the additional gas flows and the inner pressure of the second branch line into which the additional gas from the additional gas supply line flows, the initial flow rate being a maximum flow rate required for an inner pressure of the additional gas supply line to reach the inner pressure of the second branch line at the lapse of the period of time.
地址 Tokyo JP